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| SMD Type Transistors NPN Silicon Extremely High Voltage Transistor CZTA44 SOT-223 6.50 +0.2 -0.2 Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Symbol VCBO VCEO VEBO IC PD TJ,Tstg EJA Rating 450 400 6 300 2 -65 to 150 62.5 /W Unit V V V mA W Electrical Characteristics Ta = 25 Symbol ICBO ICES IEBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VCB=400V VCE=400V VBE=4.0V IC=100iA IC=100iA IC=1.0mA IE=10iA IC=1.0mA, IB=0.1mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA fT Cob Cib VCE=10V, IC=10mA, f=10MHz VCB=20V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz 40 50 45 20 20 7.0 130 MHz pF pF 200 450 450 400 6.0 0.40 0.50 0.75 0.75 Testconditons Min Max 100 500 100 Unit nA nA nA V V V V V V V V +0.15 1.65-0.15 www.kexin.com.cn 1 |
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